A novel precursor system and its application to produce tin doped indium oxide.
Identifieur interne : 001624 ( Main/Exploration ); précédent : 001623; suivant : 001625A novel precursor system and its application to produce tin doped indium oxide.
Auteurs : RBID : pubmed:21541390Abstract
A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me(2)In(O(t)Bu)(3)Sn (Me = CH(3), O(t)Bu = OC(CH(3))(3)), which is in equilibrium with an excess of Me(2)In(O(t)Bu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(II) precursor into Sn(IV) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state (119)Sn-NMR measurements of powder samples confirm the appearance of Sn(II) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.
DOI: 10.1039/c1dt10067j
PubMed: 21541390
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">A novel precursor system and its application to produce tin doped indium oxide.</title><author><name sortKey="Veith, M" uniqKey="Veith M">M Veith</name><affiliation wicri:level="3"><nlm:affiliation>INM-Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken, Germany. Michael.veith@inm-gmbh.de</nlm:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>INM-Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken</wicri:regionArea><placeName><region type="land" nuts="2">Sarre (Land)</region><settlement type="city">Sarrebruck</settlement></placeName></affiliation></author><author><name sortKey="Bubel, C" uniqKey="Bubel C">C Bubel</name></author><author><name sortKey="Zimmer, M" uniqKey="Zimmer M">M Zimmer</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1039/c1dt10067j</idno><idno type="RBID">pubmed:21541390</idno><idno type="pmid">21541390</idno><idno type="wicri:Area/Main/Corpus">001391</idno><idno type="wicri:Area/Main/Curation">001391</idno><idno type="wicri:Area/Main/Exploration">001624</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me(2)In(O(t)Bu)(3)Sn (Me = CH(3), O(t)Bu = OC(CH(3))(3)), which is in equilibrium with an excess of Me(2)In(O(t)Bu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(II) precursor into Sn(IV) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state (119)Sn-NMR measurements of powder samples confirm the appearance of Sn(II) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21541390</PMID><DateCreated><Year>2011</Year><Month>05</Month><Day>30</Day></DateCreated><DateCompleted><Year>2011</Year><Month>09</Month><Day>28</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1477-9234</ISSN><JournalIssue CitedMedium="Internet"><Volume>40</Volume><Issue>22</Issue><PubDate><Year>2011</Year><Month>Jun</Month><Day>14</Day></PubDate></JournalIssue><Title>Dalton transactions (Cambridge, England : 2003)</Title><ISOAbbreviation>Dalton Trans</ISOAbbreviation></Journal><ArticleTitle>A novel precursor system and its application to produce tin doped indium oxide.</ArticleTitle><Pagination><MedlinePgn>6028-32</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1039/c1dt10067j</ELocationID><Abstract><AbstractText>A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me(2)In(O(t)Bu)(3)Sn (Me = CH(3), O(t)Bu = OC(CH(3))(3)), which is in equilibrium with an excess of Me(2)In(O(t)Bu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(II) precursor into Sn(IV) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state (119)Sn-NMR measurements of powder samples confirm the appearance of Sn(II) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Veith</LastName><ForeName>M</ForeName><Initials>M</Initials><Affiliation>INM-Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken, Germany. Michael.veith@inm-gmbh.de</Affiliation></Author><Author ValidYN="Y"><LastName>Bubel</LastName><ForeName>C</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Zimmer</LastName><ForeName>M</ForeName><Initials>M</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2011</Year><Month>05</Month><Day>03</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Dalton Trans</MedlineTA><NlmUniqueID>101176026</NlmUniqueID><ISSNLinking>1477-9226</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2011</Year><Month>5</Month><Day>3</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2011</Year><Month>5</Month><Day>27</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>5</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>5</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>5</Month><Day>5</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1039/c1dt10067j</ArticleId><ArticleId IdType="pubmed">21541390</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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